光致发光(PL)谱,photoluminescence(PL) spectra
1)photoluminescence(PL) spectra光致发光(PL)谱
2)Photoluminescence[,f?ut?u,lju:mi"nesns]光致发光(PL)
3)photoluminescence (PL)光致发光(PL)
4)photoluminescence(PL)光致发光(PL)
5)PL spectrumPL光谱
1.According to the investigation of the well-known D-Band in thePL spectrum which has been associated to the misfit dislocations caused by the strain relaxation of SiGe epitaxial layer,the dislocations were found in both the SiGe epitaxial layer and the Si substrate.对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。
英文短句/例句
1.Study of the Low-dimensional Structures on the SiGe Alloys and the Photoluminescence;硅锗薄膜上低维结构及PL光谱研究
2.Raman and PL Spectra Studies of Natural and HPHT Synthetic Diamonds天然与高温高压合成金刚石的RAMAN与PL光谱研究
3.RAMAN and PL spectra studies of the HPHT synthetic polycrystalline diamond from Fe-C(H) systemFe-C(H)系高温高压合成金刚石多晶的RAMAN与PL光谱研究
4.Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement用PL谱评测多量子阱红外探测器外延材料
5.Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy StructureGaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
6.Oxidation Effect in Low-dimensional Structure of Si_(1-x)Ge_x Alloys and Related PL Spectra氧化对硅锗合金低维结构PL发光的影响
7.Nanoparticle and nanolayer in oxide film and substantial Ge segregation;半导体锗纳米团簇和纳米层的生成结构与PL谱研究
8.luminescence spectrum发光光谱,荧光光谱
9.spectral density谱线[频谱，光谱]密度
10.filter-grating infrared spectrometer滤光器-光栅红外光谱仪
11.correlation spectroscopy相关光谱学，相联能谱学
12.photolysis gas chromatography光解气相色谱(法)
13.a reversed line【物】自蚀(光线)谱
14.spectral radiation exitance光谱辐（射）出（射）度
15.laser-probe emission spectrometer激光探头发射光谱仪
16.flame atomic fluorescence spectrometry火焰原子荧光光谱法
17.absolute recording spectrofluorimeter全记录式荧光光谱仪
18.x ray fluorescence spectroscopyx 射线荧光光谱分析
相关短句/例句
Photoluminescence[,f?ut?u,lju:mi"nesns]光致发光(PL)
3)photoluminescence (PL)光致发光(PL)
4)photoluminescence(PL)光致发光(PL)
5)PL spectrumPL光谱
1.According to the investigation of the well-known D-Band in thePL spectrum which has been associated to the misfit dislocations caused by the strain relaxation of SiGe epitaxial layer,the dislocations were found in both the SiGe epitaxial layer and the Si substrate.对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。
6)photoluminescence spectra光致发光谱
1.Broadband yellow luminescence in thephotoluminescence spectra of n-GaN implanted by the different ions;离子注入n型GaN光致发光谱中宽黄光发射带研究
2.The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra andphotoluminescence spectra and light yield.通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.Photoluminescence spectra peaks as a function.本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ/Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
延伸阅读
场致发光材料(见电致发光材料)场致发光材料(见电致发光材料)electroluminescent material见场致发光材料eleetrolumineseent material电致发光材料。
