光致发射光谱,photoluminescence spectra
1)photoluminescence spectra光致发射光谱
2)field emission spectroscop场致发射光谱学
3)photoluminescence spectra光致发光谱
1.Broadband yellow luminescence in thephotoluminescence spectra of n-GaN implanted by the different ions;离子注入n型GaN光致发光谱中宽黄光发射带研究
2.The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra andphotoluminescence spectra and light yield.通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.Photoluminescence spectra peaks as a function.本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ/Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
英文短句/例句
1.Study on Photoluminescence Spectra and Threading Dislocation Properties of GaNGaN光致发光谱与穿透位错特性研究
2.A Study on Photoluminescence Spectroscopy of Sapphire from Penglai,Hainan海南蓬莱蓝宝石的光致发光谱学特征及意义
3.Photoluminescence spectra studies of La_(0.67)Ca_(0.33)MnO_3;La_(0.67)Ca_(0.33)MnO_3的光致发光光谱的研究
4.luminescence spectrum发光光谱,荧光光谱
5.Characterization of Semiconductor Photocatalysts by Photoluminescence Spectroscopy;半导体光催化材料光致发光光谱的研究
6.Design and Application of Laser Photoluminescence Analysis System激光光致发光光谱分析系统的设计及应用
7.It shows that the collection is superposition of Raman and photoluminescence spectrum.结果表明,所采集到的是拉曼光谱和光致发光光谱的叠加。
8.Fluorescence Spectra of Rubrene Dopant for Organic Light-Emitting Devices有机电致发光器件中Rubrene掺杂剂的荧光光谱性质
9.Raman and photoluminescence spectra on type Ⅱ InAs/GaSb superlatticesInAs/GaSb Ⅱ型超晶格的拉曼和光致发光光谱
10.Influence of Fluorescent Dye Ultrathin Layer on Luminescence Spectra in Organic Light-Emitting Diodes荧光染料超薄层对有机电致发光器件发光光谱的影响
11.Study on Adjusting the Spectra of Inverted Top-emitting Organic Light-emitting Devices倒置顶发射有机电致发光器件光谱调节的研究
12.Development of Electroluminescence Measurement System and Study of Electroluminescence Spectra Characteristics in Insulating Polymers;电致发光测量装置研制及几种绝缘聚合物电致发光谱特性
13.Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy studySiO_2纳米线簇、C-Si-O纳米球的制备及形貌、红外光谱和光致发光光谱研究
14.Simulation for the Absorption and Emission Spectra of Cu～I Complexes;电致发光材料Cu～I配合物吸收和发射光谱的模拟研究
15.Photoluminescence Spectra of CdSe/ZnS-Quantum Dot Doped Fiber with High Doping Concentrations较高掺杂浓度下CdSe/ZnS量子点光纤光致荧光光谱
16.laser-probe emission spectrometer激光探头发射光谱仪
17.X-ray fluorescent emission spectrometerX射线荧光发射光谱仪
18.uv photoemission spectroscopy紫外线光电发射光谱学
相关短句/例句
field emission spectroscop场致发射光谱学
3)photoluminescence spectra光致发光谱
1.Broadband yellow luminescence in thephotoluminescence spectra of n-GaN implanted by the different ions;离子注入n型GaN光致发光谱中宽黄光发射带研究
2.The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra andphotoluminescence spectra and light yield.通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.Photoluminescence spectra peaks as a function.本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ/Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
4)photoluminescence spectrum光致发光谱
1.The synthesized powder was characterized by X -ray powder diffraction, high resolution transmission electron microscopy(HRTEM) andphotoluminescence spectrum.测量了合成粉末的X射线衍射谱、光致发光谱和高分辨透射电子显微像 (HRTEM) ,发现合成的粉末是平均粒度为 3 2nm的纤锌矿结构的氮化铝 ,此AlN中存在蓝光发光带 。
5)photoluminescence[,f?ut?u,lju:mi"nesns]光致发光谱
1.15) by magnetron sputtering and studied the transmittance andphotoluminescence of the samples.研究光的透过率和光致发光谱(PL谱)。
pared with the absorbance spectrum, thephotoluminescence excited by laser with λ=395nm has Stokes shift.与薄膜的吸收谱线比较,在375nm飞秒激光激发下测量的量子点的光致发光谱存在Stokes位移。
3.The structural and optical properties were characterized with X-ray diffraction(XRD)andphotoluminescence(PL),respectively.利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究。
6)PL光致发光谱
1.By means of optical absorption,photoluminescence(PL),and ellipsometric spectra,metal organic chemical vapor deposition(MOCVD)grown InN films are investigated.利用吸收光谱、光致发光谱、喇曼散射光谱和椭圆偏振光谱一系列光学手段,对采用金属有机物气相沉积法(MOCVD)制备的InN薄膜的光学性质进行了系统研究。
2.The crystallization of the top Si layer in SIMOX,especia ll y the behavior of residual oxygen in the top Si layer,is investigated by means o fPL and SIMS,with the sample of P type(100) Si.利用光致发光谱 (PL)和二次离子质谱 (SIMS)检测了不同退火条件下处理的 SIMOX材料的顶层硅膜 。
3.Properties of Al-doped 4H-SiC epitaxial layer,grown by CVD on the 4H-SiC were studied using scanning electron microscope(SEM),X-ray diffraction(XRD)and photoluminescence(PL).利用扫描电子显微镜(SEM)、X射线双晶衍射谱(XRD)和光致发光谱(PL)对在4H-SiC单晶衬底上采用CVD同质外延的4H-SiC单晶薄膜的特性进行研究,发现外延层有很好的晶格结构和完整性。
延伸阅读
X射线发射光谱法分子式：CAS号：性质：又称X射线荧光光谱法（X ray fluorescence spectrometry）。以原级X射线作为激发方式的发射光谱分析方法。试样物质经原级X射线照射，产生次级X射线光谱，即X射线荧光光谱。
