场电子发射,electron field emission
1)electron field emission场电子发射
1.The influence of thermal annealing on theelectron field emission characteristics of the AIN coating on Si substrate was investigated.以氮气为反应气体;用射频反应溅射方法制备了AIN薄膜,结合XPS和XRD表征考察了热退火后处理对样品场电子发射性能的影响。
2.Current research onelectron field emission from wide band-gap materials, such as diamond, diamond-like carbon, cubic boron nitride, aluminum nitride and silicon carbide films is reviewed.介绍了以金刚石为代表的宽带隙薄膜材料场电子发射研究背景和现状 ,对金刚石、类金刚石 (DLC)、立方氮化硼 (c-BN)、氮化铝 (AlN)和碳化硅 (SiC)薄膜场电子发射研究的进展进行了评述 ,着重介绍了发射性能与薄膜的结构特征、杂质含量和处理方法间的关系 ,并讨论了研究中存在的问题 。
3.The behavior ofelectron field emission from CVD d iamond films implant ed by nitrogen iron has been studied.研究了氮离子注入CVD金刚石薄膜的场电子发射行为 。
2)field electron emission场电子发射
1.Preparation andfield electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 。
2.Field electron emission measurements of nano-carbon films were also carried out showing the ture on field as low as 1.进一步的场致发射测试结果显示:此种类毛虫形状纳米级碳薄膜具有场发射大面积大(>4cm~2)、发射点密度高且发射均匀的特征,其场电子发射阈值电场较低(<1。
3)electron field emission电子场发射
1.First-principles study ofelectron field emission from the carbon nanotube with B doping and H_2O adsorption;掺硼水吸附碳纳米管电子场发射性能的第一性原理研究
2.First-principles study ofelectron field emission from the carbon nanotube with nitrogen doping and H_2O adsorption氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究
3.The effects of the thermal annealing on the bonding structure and theelectron field emission characteristics of CN_x films were investigated.结果发现,沉积的CNx膜中氮原子与sp,sp2,sp3杂化碳原子相键合,并对经过退火的CNx膜的键合结构和电子场发射特性的影响进行了研究。
英文短句/例句
1.First-principles study on field emission properties of carbon nanocone碳纳米锥电子场发射的第一性原理研究
2.First-principles study of electron field emission from the carbon nanotube with nitrogen doping and H_2O adsorption氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究
3.field emission electron microscope场致发射电子显微镜
4.Development Process of MIM Electron Emission Structure Used in FED;用于场致发射显示的MIM型电子发射结构的研制
5.Electron Field Emission Characteristics of Nanoscale Porous Silicon纳米多孔硅的场致电子发射性能研究
6.transmission type secondary emitter透射型二次电子发射极
7.bright-field transmission electron microscope亮场透射电子显微镜
8.Study of Fabricating Silicon-tip Field Emission Array Used in Micravacuum Devices真空微电子器件中的场发射硅尖阵列制作研究
9.Simulation of Self-Focusing Electron Emitter;具有汇聚特性的场发射电子源的模拟研究
10.Field electron emission from eruciform carbon nano-structure thin films类毛虫状纳米级碳膜场致电子发射研究
11.A Study on the Cathodes of FED and Their Synthesis场致电子发射阴极及其制备方法的研究
12.the emission of electrons that are stripped from parent atoms by a high electric field.高能电场使得电子从原子剥离出来向外发射的过程。
13.Quantum apparatus have lower emitted threshold, great emit current density, more stability etc excellent field emit performance so that it could use to facture high performance flat displayer.量子器件具有发射阈值低、发射电流密度大、稳定性高等优异的场发射性能。
14.Study of High Emission Current Property of CNT Cold Cathode大电流场发射冷阴极发射性能的研究
15.OSEE (Optically Stimulated Exoelectron Emission)光激发外逸电子发射
16.Research of the Effects of ESD Radiation Field on Shielded Electronic Equipment;屏蔽电子系统抗静电放电辐射场研究
17.The magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.自由电子在电场的作用下,会由于晶体中的杂质而发生散射,迁移率就是指这种散射发生的频率。
18.emission electron microscope发射电子显微镜;发射式电子显微镜;放射电子显微镜
相关短句/例句
field electron emission场电子发射
1.Preparation andfield electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 。
2.Field electron emission measurements of nano-carbon films were also carried out showing the ture on field as low as 1.进一步的场致发射测试结果显示:此种类毛虫形状纳米级碳薄膜具有场发射大面积大(>4cm~2)、发射点密度高且发射均匀的特征,其场电子发射阈值电场较低(<1。
3)electron field emission电子场发射
1.First-principles study ofelectron field emission from the carbon nanotube with B doping and H_2O adsorption;掺硼水吸附碳纳米管电子场发射性能的第一性原理研究
2.First-principles study ofelectron field emission from the carbon nanotube with nitrogen doping and H_2O adsorption氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究
3.The effects of the thermal annealing on the bonding structure and theelectron field emission characteristics of CN_x films were investigated.结果发现,沉积的CNx膜中氮原子与sp,sp2,sp3杂化碳原子相键合,并对经过退火的CNx膜的键合结构和电子场发射特性的影响进行了研究。
4)field emission electrons场发射电子
5)field emission场致电子发射
1.Thefield emission properties were tested by using a diode structure in a vacuum chamber.测试了类球状微米金刚石聚晶膜的场致电子发射特性。
2.Thefield emission cathode was fabricated with a simple screen printing method.采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。
3.Recently, a number of experiments and theoretical researches have showed that diamond thin films,especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited forfield emission cold cathode which is applied in manyfield emission applications, such as microwave vacuum devices andfield emission displays.近年来 ,国内外不断有实验和理论研究表明,金刚石薄膜特别是纳米晶金刚石薄膜,在低的开启电压作用下,即可获得很高的场致发射电流密度,具有十分优秀的场致电子发射特性,是一种理想的场致发射阴极材料。
6)field electron emission场致电子发射
1.Fullerene-like nano-crystalline CN_x films and its characteristics offield electron emission;类富勒烯纳米晶CN_x薄膜及其场致电子发射特性
2.The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and thefield electron emission from the film was measured.利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验。
3.Prebreakdown was observed underfield electron emission experiments from amorphous carbon-polyimide films which were firstly deposited on silicon substrate with high electrical conductivity by pulse laser deposition.利用脉冲激光沉积技术(PulsedLaserDeposition)首次制备出非晶碳-聚酰亚胺复合薄膜,用其做为冷阴极,观察到其场致电子发射的预击穿现象,预击穿后阈值场强为7V/μm,最大发射电流密度为1。
延伸阅读
库鲁发射场(见航天器发射场)库鲁发射场(见航天器发射场)Kourou Launching SiteKulu Fashechang库鲁发射场(Kourou Laune址ng site)见航天器发射场。