掺杂TiO2,Doped titania
1)Doped titania掺杂TiO2
英文短句/例句
1.Studies on Synthesis and Magnetic Properties of Rare Earth (Sm, Gd) Doped TiO2 Semiconductor稀土（Sm，Gd）掺杂TiO2稀磁半导体的制备和磁性研究
2.Solvothermal Fabrication and Characterization of Iron Doped Mesoprous TiO_2Fe(Ⅲ)掺杂介孔TiO2的溶剂热法合成与表征
3.A Study on the Preparation of Fe\Zn Doped Nanometer TiO2 Photocatalyst Coated on Activited Carbon and Its Photocatalystic Property;活性炭负载Fe\Zn掺杂纳米TiO2半导体光催化剂的制备与光催化性能研究
4.A substance that adulterates.掺杂物掺有杂质的物质
5.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
6.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
7.buried collector dopant隐埋集电极用掺杂剂
8.modulation-doped field effect transistor调制掺杂场效晶体管
9.Her tears mingled with her laughter.她的笑里掺杂着泪水。
10.it is necessary to remove the adulterants before use.使用前不必去除掺杂物。
11.the adulterating effect of extraneous materials.其他物质掺杂的结果。
12.a blur of fact and fancy.真实和幻想掺杂不清.
13.doped-silica graded fiber掺杂石英渐变型光纤
14.Atomsitic Simulation of Doped LaMnO_3 and La_2CuO_4;掺杂LaMnO_3和La_2CuO_4的原子模拟
15.Study of the Doped LaMnO_3 System NTC Material;掺杂LaMnO_3系NTC材料的研究
16.Study on the Property of PTCR Doped with TiCN;掺杂TiCN的PTCR性能的研究
17.Effects of SrCO_3 on Electrical Properties of La_2Ti_2O_7 CeramicSrCO_3掺杂La_2Ti_2O_7陶瓷的电性能
18.Preparation and Photocatalystic Properties of TiO_2 Nanopowders and TiO_2 Composite Films;纳米TIO2粉体和复合TIO2膜的制备及其光催化性能
相关短句/例句
Fe-doped TiO_2铁掺杂TiO2
3)Zn-doped TiO_2锌掺杂TiO2
4)yttrium doping titania钇掺杂TiO2
5)copper-doped TiO_2铜掺杂TiO2
6)quantity of doped TiO2TiO2掺杂量
1.The effect of thequantity of doped TiO2 on the recovery time of the PTCR starter was investigated by adjusting thequantity of doped TiO2.为了研究TiO2添加量对PTCR启动器恢复特性的影响,采用改变TiO2掺杂量的方法,对不同TiO2掺杂量的PTCR启动器恢复特性进行了研究。
延伸阅读
CaO-TiO2-SiO2 ceramics分子式：CAS号：性质：在CaO-TiO2-SiO2三元系统中以CaSiO3与TiO2或以CaTiSiO5与CaTiO3为基料的陶瓷材料。其结构特点是两种晶相共存，性能受晶相比例影响。配比可在一定范围内调节。主要原料为碳酸钙、二氧化钛、二氧化硅，加入少量改性添加剂，经配料、磨细、混合、成型、烧成等工序获得制品，也可先用碳酸钙和二氧化硅高温下合成硅酸钙，用碳酸钙、二氧化硅、二氧化钛高温下合成钛硅酸钙后再进行配料、烧成等，以确保两晶相共存。主要介电性能为：介电常数80～110，介质损耗角正切值(0.8～2.5)×10-4，介电常数温度系数(-450～+550)×10-6/℃。抗电温度(45～55)kV/mm，电阻率(1011～1012)Ω·cm。主要用作温度补偿型陶瓷电容器瓷料。
