高k电介质,High k dielectric
1)High k dielectric高k电介质
英文短句/例句
1.Research on the Fabrication of High-k Dielectric Films and the Discussion of Integrated Thin Film Capacitor;高k电介质薄膜制备研究与集成薄膜电容探讨
2.Electrical Properties of High-k Gate Dielectric SiGe MOS Devices;高k栅介质SiGe MOS器件电特性研究
3.Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics超薄高k栅介质Ge-pMOSFET的电特性研究
4.Gate Leakage Properties of Small-Scaled High-k Gate Dielectric MOS Devices;小尺寸高k栅介质MOS器件栅极漏电特性研究
5.Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric;小尺寸MOSFET阈值电压模型及高k栅介质制备
6.The Study of Optical and Electrical Properties of High K Dielectric Poly(Vinylidene Fluoride-trifluoroethylene) Copolymer;高K介质材料偏氟乙烯和三氟乙烯共聚物光学和电学性质的研究
7.The Fabrication and Memory Characteristics of Ge Nano-crystals in High-k Dielectrics;埋嵌在高k介质中Ge纳米晶的制备及其电荷存储特性的研究
8.Characterization of high-k gate dielectrics by atomic-resolution electron microscopy:current progress and future prospects高k栅介质原子分辨率的电镜表征:研究进展和展望(英文)
9.Model and Technology of High-k Gate Dielectric MOS Devices;高k栅介质MOS器件模型和制备工艺研究
10.Studies on the High-K Gate Dielectrics MOSFET and Related Device Effects;高K介质栅纳米MOSFET特性及相关器件效应的研究
11.Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics高K栅介质HfSi_xO_y薄膜的制备工艺与结构分析
12.Application of High-k Dielectrics to Floating Gate Nonvolatile Memory高k介质在浮栅型非挥发性存储器中的应用
13.Physical and Electrical Properties of ZrO_2 Gate Dielectrics Film高介电栅介质ZrO_2薄膜的物理电学性能
14.high-frequency dielectric loss measuring instrument高频电介质损耗测量仪
15.Formation and Photoluminesence Properties of Semiconductor Nanocrystals Embedded in High-K Dielectric Materials半导体纳米点镶嵌在高K介电材料中的制备及其发光特性的研究
16.Preparation and Property of High-k HfO_2 Gate Dielectric Materials高介电常数HfO_2栅介质的制备及性能
17.Development of High Frequency and High Voltage Power Supply Used in Discharge of Dielectric Barrier;介质阻挡放电用高频高压电源的研制
18.Preparation and Dielectric Tunability of K Doped PST Ferroelectric FilmK掺杂PST薄膜的制备与介电调谐性能
相关短句/例句
high k dielectric technique高k电介质技术
1.The crucial techniques of the 45 nm chip technology,such as 193 nm ArF dry/immersion lithography,low andhigh k dielectric techniques,strained silicon technique and so on,are intruduced.介绍了45 nm芯片所采用的关键工艺技术:193 nm ArF干法/浸没式光刻技术、低k电介质技术、高k电介质技术和应变硅技术等。
3)High-k dielectric films高k电介质薄膜
1.research ofHigh-k dielectric films for MOS gate dielectric applications;b.本文第一部分以溅射沉积SiO_xN_y、TiO_2等高k电介质薄膜为研究主题,研究了溅射工艺对薄膜成分、结构的影响;并以MOS电容栅介质为应用背景,对薄膜电学性能进行了讨论。
4)High-k dielectrics高k介质
5)high-K gate dielectrics高K栅介质
1.Preparation and characterization of ZrO_2 thin films as novelhigh-K gate dielectrics;新型高K栅介质ZrO_2薄膜材料的制备及表征
6)high-k gate dielectric高k栅介质
1.Fabrication and properties of the Y-doped Al_2O_3high-k gate dielectric films;Y掺杂Al_2O_3高k栅介质薄膜的制备及性能研究
延伸阅读
高分子电介质分子式：分子量：CAS号：性质：见高分子绝缘材料。
