室温单电子晶体管,single electron transistor at room temperature
1)single electron transistor at room temperature室温单电子晶体管
2)single electron transistor单电子晶体管
1.Quantum calculations of tunneling resistance insingle electron transistors;单电子晶体管隧穿电阻的量子计算
2.A numerical analysis of the I-V property ofsingle electron transistors;单电子晶体管I-V特性数值分析
3.The successful fabrication of Si basedsingle electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.采用电子束光刻技术和反应离子刻蚀等工艺 ,在 P型 SIMOX硅片上成功地制备了一种单电子晶体管。
英文短句/例句
1.Macro-Model of Single-Electron Transistor Based on Voltage-Controlled Unit基于压控单元的单电子晶体管宏模型
2.A SPICE Model for Single-Electron Transistor一种单电子晶体管的SPICE模型
3.The Design and Simulation of the Hybrid Circuits with Single Electron Transistors and MOS;单电子晶体管和MOS管的混合电路设计与仿真
4.A Dynamic Full Adder Circuit Based on Single Electron Transistors基于单电子晶体管的动态全加器电路设计
5.A Full Adder Design using Single Electron Transistors一种基于单电子晶体管的全加器电路设计
6.A CNN Implementation Method Based on Single-Electron Transistor基于单电子晶体管细胞神经网络的实现方法
7.Fabrication of Nano-Structures and Study of Si-Based Single Electron Transistor;纳米结构制备和硅单电子晶体管的研究
8.Design and Simulation of a Reconfigurable Single-Electron Transistor Logic Gates可重构单电子晶体管逻辑的设计与模拟
9.A Verilog-A Behavioral Model for SET Based on the Master Equation Method基于主方程法单电子晶体管的Verilog-A行为模型
10.Improvement of Electro Mechanical Single Electron Transistor Semi-classical Model and Investigation of Its Transport Characteristics;机电单电子晶体管半经典模型的改进和输运特性的研究
11.The Research of Modeling of Single Electron Transistor Based on Master Equation and Simulation of Its Circuits;基于主方程法单电子晶体管的建模及其电路仿真的研究
12.high electron mobility transistor高电子迁移率晶体管
13.transistorized electronic digital computer晶体管数字电子计算机
14.(of an electronic device) equipped with transistors.（指电子装置）装有晶体管。
15.HITAC (HITACHI Transistor Automatic Computer)日立晶体管电子计算机
16.single device mos gate单金属氧化物半导体晶体管式门电路
17.Quantum Effect Devices : Electron waveguides, single electron transistors, etc.26量子效应元件：电子波导，单电子电晶体等。
18.transistor-transistor logic晶体管-晶体管逻辑电路
相关短句/例句
single electron transistor单电子晶体管
1.Quantum calculations of tunneling resistance insingle electron transistors;单电子晶体管隧穿电阻的量子计算
2.A numerical analysis of the I-V property ofsingle electron transistors;单电子晶体管I-V特性数值分析
3.The successful fabrication of Si basedsingle electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.采用电子束光刻技术和反应离子刻蚀等工艺 ,在 P型 SIMOX硅片上成功地制备了一种单电子晶体管。
3)single-electron transistor单电子晶体管
1.Sisingle-electron transistor with in-plane point-contact metal gates;点接触平面栅型硅单电子晶体管
2.Based on I-V characteristics ofsingle-electron transistor and the idea of MOS digital circuit design,an inverter using the single-electro and MOS transistors is proposed and some other logic gate circuits are educed.基于单电子晶体管的I-V特性和MOS晶体管的逻辑电路设计思想,提出了1个单电子晶体管和MOS晶体管混合的反相器电路,进而推导出其它基本逻辑门电路,并最终实现了一个半加器电路。
3.Based on the I-V characteristics of hybrid structure of double-inputsingle-electron transistor and MOSFET and the concepts of digital integrated circuit design,a comparator,which consists of 5 double-gate SETs and 6 MOSFETs,is proposed.基于双输入单电子晶体管与MOSFET的混合结构I-V特性和数字电路的逻辑设计思想,提出了一种由5个双栅极SET和6个MOSFET构成的一位比较器电路结构。
4)single electron transistors单电子晶体管
1.The structures, principles, characters and applications ofsingle electron transistors are clarified,based on the traditional theories.基于传统单电子理论 ,阐述了单电子晶体管的结构、原理、特点及应用。
2.Based on an equivalent circuit forsingle electron transistors, the electrostatic energy on the charges is deduced.通过研究单电子晶体管在电路中的静电能量的变化 ,得到了它的阻塞、导通情况与其两端偏压和控制栅压之间的关系 ,从而给出了它的通断图 。
3.A few novelsingle electron transistors are discussed in details, which have more chance to be used to construct next generation electronics with new system architectures.随微细加工技术的发展 ,单电子晶体管的研究越来越受到重视。
5)RF single-electron transistorRF单电子晶体管
6)single-electron transistors单电子晶体管
1.A digital filter hardware implement withsingle-electron transistors;基于单电子晶体管的数字滤波器硬件实现
2.A Full Adder Realization with Complementary Single-Electron Transistors;一种基于互补型单电子晶体管的全加器电路设计
3.Realization and output characteristics analysis of themultiple islandssingle-electron transistors;多岛单电子晶体管的实现及其源漏特性分析
延伸阅读
晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
