硅纳米晶,Silicon nanocrystal
1)Silicon nanocrystal硅纳米晶
英文短句/例句
1.The Effect of C~+ Implantation on Photoluminescent Properties of Si Nanocrystals;C~+注入对硅纳米晶发光性能的影响
2.Synthesis and Characterization of Silicon Carbide Whisker Arrays Prepared by Thermal Evaporation Method;热蒸发方法碳化硅纳米晶须阵列的合成与表征
3.Synthesis and Characterization of Silicon Carbide Nano-whisker by Thermal Evaporation Method;碳化硅纳米晶须的热蒸发法合成与表征
4.Microstructure and optical properties of Si nanocrystals embedded in SiO_2 film二氧化硅基质包埋硅纳米晶的微观结构和发光性能
5.Preparing Polycarbosilane Nanoparticle Through GAS Annealing Crystallization;GAS重结晶制备聚碳硅烷纳米微粒
6.Research on Process of Polysilicon Nanofilm Pressure Sensor多晶硅纳米薄膜压力传感器工艺研究
7.Design of Polysilicon Nano-Film MEMS Pressure Sensor Structure多晶硅纳米薄膜MEMS力敏结构研究
8.Formation of Al Ohmic Contacts to Polysilicon NanofilmsAl金属多晶硅纳米膜欧姆接触的制作
9.Molecular Dynamics Simulation of Thermal Conductivity of Silicon Crystal and Silicon Nanowires;硅晶体及硅纳米线导热系数的分子动力学模拟
10.Research of Nc-Si/c-Si Heterojunction MOSFETs Pressure-magnetic Mutli-sensor;纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究
11.Fabrication of Nano-Structures and Study of Si-Based Single Electron Transistor;纳米结构制备和硅单电子晶体管的研究
12.Molecular Dynamics Simulation on In-Plane Thermal Conductivity of Single-Crystal Si Film at Nanoscale;单晶硅纳米薄膜面向热导率的分子动力学模拟
13.The Study of Field Emission Cold Cathode Based on Nanocrystalline Silicon Quantum Dots;纳米晶体硅量子点场致发射冷阴极研究
14.Study on Partial Cone Cracks in Nano-grinding of Single Crystal Silicon;单晶硅纳米磨削过程的摩擦裂纹试验研究
15.Study on Piezoresistive Principle and Properties of Polysilicon Nanofilms;多晶硅纳米薄膜压阻机理与特性的研究
16.Study on the Monocrystal Silicon Nanometric Grinding by Molecular Dynamics Simulations;单晶硅纳米级磨削过程的分子动力学仿真研究
17.Pyrolytic Synthesis of Single-Crystal Si_3N_4 Nanowires by Polymeric Precursor有机前驱体热解法合成单晶氮化硅纳米线
18.Electric field-assisted diffusion of Ag~+ into silicate glass and the growth of silver nano-crystalsAg~+在硅酸盐玻璃中电场诱导扩散与纳米晶析出
相关短句/例句
nanocrystalline silicon纳米晶硅
1.Nanocrystalline silicon (nc Si) clusters can be formed by rapid thermal annealingthe hydrogenated amorphous silicon (a Si∶H) films at 600～620℃ for about 10s.本文报道对氢化非晶硅 ( a-Si∶H)薄膜在 6 0 0～ 6 2 0℃温度下快速退火 1 0 s可以形成纳米晶硅 ( nc-Si) ,其 Raman散射表明 ,在所形成的 nc-Si在薄膜中的分布是随机的 ,直径在 1 。
2.Thenanocrystalline silicon clusters formed in thermally annealed a-Si:H films and the potoluminescence;报道了氢化非晶硅薄膜在600-620℃温度下快速退火10 s可以形成纳米晶硅,其拉曼散射表明,所形成的纳米晶硅在薄膜中的分布是随机的,其直径在1。
3)Silicon nanocrystallites纳米硅晶
4)nanomorphous silicon纳米非晶硅
1.Hydrogenatednanomorphous silicon(na-Si∶H) p-i-n solar cells;氢化纳米非晶硅(na-Si:H)p-i-n太阳电池
5)nanocrystalline silicon纳米硅晶粒
1.Preferred growth ofnanocrystalline silicon in boron-doped hydrogenatednanocrystalline silicon films;掺硼nc-Si:H薄膜中纳米硅晶粒的择优生长
6)nano-Si纳米微晶硅
延伸阅读
纳米晶硅分子式：CAS号：性质：又称纳米晶硅。晶粒在10nm左右的多晶硅材料。其性质不同于大晶粒多晶硅，又不同于非晶硅。带隙可达2.4eV(晶体硅为1.12eV)，电子和空穴迁移率均高于非晶硅两个数量级以上。光吸收系数介于晶体硅和非晶硅之间。采用辉光放电化学气相沉积法，减压化学沉积法，磁控溅射法，非晶硅热处理法等制备。可用作太阳电池窗口材料、异质结双极型晶体管、薄膜晶体管等。
