多晶硅薄膜,polycrystalline silicon thin film
1)polycrystalline silicon thin film多晶硅薄膜
1.Study on low temperature electrical properties ofpolycrystalline silicon thin films deposited at low temperatures using SiCl_4/H_2;SiCl_4/H_2为气源低温沉积多晶硅薄膜低温电学特性的研究
2.Study of preparingpolycrystalline silicon thin film by RTA快速热退火制备多晶硅薄膜的研究
3.Effects of thickness and grain size on Voc,Jsc,and ( of n +/p and n +/p p +polycrystalline silicon thin film solar cells have been calculated by PC1D.利用PC1D计算了结构为n+ / p和n+ / p p+多晶硅薄膜太阳电池的晶粒尺寸和薄膜厚度对其Voc,Jsc和 η的影响。
英文短句/例句
1.Fabrication of P-type Amorphous Silicon Thin Films and Poly-Silicom by PECVD;PECVD法制备P型非晶硅薄膜及多晶硅薄膜
2.Preparation of Poly-Silicon Thin Film in Low Temperature Using SiH_4 as Gas Source by ECR-PECVD;以硅烷为气源用ECR-PECVD制备多晶硅薄膜
3.The Effect of Crystallization Ratio on Dark Conductivity of Poly-Silicon Thin Films;多晶硅薄膜晶化率对暗电导率的影响
4.Structure Analysis of Polycrystalline Silicon Films Prepared by ECR-PECVD at Low Temperature;多晶硅薄膜ECR-PECVD低温生长结构研究
5.Growth of Polycrystalline Silicon Thin Films on Flexible Substrate;在柔性衬底上制备多晶硅薄膜的研究
6.Low-temperature Deposition of Poly-silicon Thin Films by ECR-PECVD and Its Characteristic Analysis;多晶硅薄膜的ECR-PECVD低温沉积及特性
7.Preparation of Polycrystalline Silicon Film on Upgraded Metallurgical Silicon Substrate by ECR-PECVD;在升级冶金级硅衬底上用ECR-PECVD沉积多晶硅薄膜
8.Studies on Preparing Poly-Si Thin Film on Ssp Substrate at Low-temperature;以硅带为衬底低温制备多晶硅薄膜的研究
9.A Research on Driving Module of Poly-Si TFT OLED;多晶硅薄膜晶体管有机发光显示模块的研制
10.Studies on Grain-boundary States in Polysilicon Films FET;多晶硅薄膜场效应结构的晶粒间界能态分布
11.Study and Simulation on Reliability of Poly-Si Thin Film Transistor;多晶硅薄膜晶体管可靠性研究及其模拟
12.Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT"s Leakage Region多晶硅薄膜晶体管泄漏区带间隧穿电流的建模
13.Low-temperature Deposition of Poly-silicon Thin Films by Hot-wire CVD and the Analysis on Characteristics;热丝法低温制备多晶硅薄膜及其特性分析
14.Probe Diagnosis of Electron Space Characteristics in SiCl_4/H_2 Plasma during Polycrystalline Silicon Film Deposition;SiCl_4/H_2沉积多晶硅薄膜过程中电子空间特性检测
15.Influence of Metal Underlayers on Low-temperature Deposition of Poly-silicon Thin Films by Hot-wire CVD;过渡层对热丝法低温制备多晶硅薄膜的影响
16.Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD;热丝化学气相沉积制备多晶硅薄膜的研究
17.Study on the Polycrystalline Silicon Thin Film Solar Cells on Ceramics;陶瓷衬底上多晶硅薄膜太阳电池的研究
18.Preparation of Poly-silicon Thin Film in Low Temperature Using SiCl_4 as Gas Source by PECVD;以SiCl_4为气源用PECVD方法低温沉积多晶硅薄膜
相关短句/例句
poly-Si thin films多晶硅薄膜
1.This article introduced the method of fabricatingpoly-Si thin films by aluminum-induced crystallization(AIC)of amorphous silicon, and described the general process of fabricatingpoly-Si thin films.多晶硅薄膜在微电子和能源科学领域有着广泛的应用。
2.Under the help of SEM measurement,the morphologies of the Poly-Si thin films were analyzed basing on the growing theory ofpoly-Si thin films,The result shows that columnar grains could be formed in thick films,and the thicker the films are,the larger the columnar grains grow.在多晶硅薄膜(Poly-S i)生长理论的基础上,用等离子体化学气相沉积(RF-PECVD)系统,配合快速光热退火装置(RTP),在玻璃衬底和石英衬底上制备了柱状结构的多晶硅薄膜。
3.In this thesis, the fabrication of high qualitypoly-Si thin films is investigated.随着第三代太阳能电池——薄膜太阳能电池的深入研究,要提高多晶硅薄膜太阳能电池的光伏转换效率,制备高质量的多晶硅薄膜是从本质上解决问题的一个途径。
3)polycrystalline silicon film多晶硅薄膜
1.Effect of hydrogen dilution on structure and optical properties ofpolycrystalline silicon films;氢稀释对多晶硅薄膜结构特性和光学特性的影响
2.Control of grain size during low-temperature growth ofpolycrystalline silicon films;多晶硅薄膜低温生长中晶粒大小的控制
3.The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties ofpolycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.用a -Si∶H薄膜经退火晶化成的多晶硅薄膜 ,其晶化温度、晶粒尺寸和电性能与薄膜的初始结构有密切关系 ,而a -Si∶H薄膜的初始结构依赖于沉积条件。
4)polycrystalline silicon films多晶硅薄膜
1.The light-stability ofpolycrystalline silicon films deposited at low temperatures from SiCl_4/H_2 mixture;用SiCl_4/H_2气源沉积多晶硅薄膜光照稳定性的研究
2.High qualitypolycrystalline silicon films were directly fabricated from SiCl 4_H 2 mixture gases by plasma chemical vapor deposition technique with deposition rate and crystalline fraction of 3.以SiCl4 和H2 为气源 ,用等离子体增强化学气相沉积技术 ,以 3 5 s的速率生长出了晶化度为 75 %的优质多晶硅薄膜 。
3.High-qualitypolycrystalline silicon films composed of large and uniform columnar grains with a moderate lateral grain size of ～1μm,vertical grain size of ～ 20μm and crystalline fraction(fc) over 95 % have been fabricated on glass substrates with metal Cu-induced layer by hot-wire chemical vapor deposition(HWCVD).采用热丝化学气相沉积法(HWCVD),在金属铜诱导层上成功制备出横向晶粒尺寸在1μm左右、垂直晶粒尺寸达20μm的柱状多晶硅薄膜,其晶化率在95%以上。
5)polysilicon thin films多晶硅薄膜
1.A novel method for electrically measuring the thermal expansion coefficient ofpolysilicon thin films is presented.提出了一种新型多晶硅薄膜热膨胀系数的电测试结构,给出了热机电耦合模型和测试方法,并利用Coventor软件和ANSYS软件进行模拟和验证。
2.A test structure to measure the diffusivity ofpolysilicon thin films is proposed.本文提出了一种表面加工多晶硅薄膜的在线测试结构。
3.An on-line test structure for measuring the thermal conductivity ofpolysilicon thin films is proposed.提出了一种在线测试表面加工多晶硅薄膜热导率的结构 ,推导了热学模型 ,给出了测试方法 ,用 ANSYS验证了热学模型 。
6)LTPS低温多晶硅薄膜
1.The low-temperature polycrystalline silicon thin films(LTPS),as the first choice for the fabrication of thin film transistor(TFT),have attracted more and more attention recently because of its excellent performance for flat panel display.低温多晶硅薄膜是制备高性能薄膜晶体管的首选材料,由其制成的薄膜晶体管由于在平板显示器件驱动中所展现的优越性能而受到广泛关注。
2.The principles and progress ofLTPS preparation methods including metal induced lateral crystallization(MILC),excimer laser annealing(ELA),catalytic chemical vapor deposition(Cat-CVD) and inductively coupled plasma chemical vapor deposition(ICP-CVD) were systematically introduced.系统介绍了金属诱导横向晶化法、准分子激光晶化法、触媒化学气相沉积法(Cat-CVD)以及电感耦合等离子体化学气相沉积法(ICP-CVD)制备低温多晶硅薄膜的原理及进展。
3.Presently, the driving technology based on the thin film transistor (TFT) of low temperature polycrystalline silicon (LTPS) has been proven to be the only way to achieve excellent performances in the large area flat-panel displayers.低温多晶硅薄膜晶体管(LTPS-TFT)驱动技术是实现大尺寸全彩平板显示的必由之路。
延伸阅读
硅多晶的硅烷法制备硅多晶的硅烷法制备polycrystalline silicon manufacture by silane processgUIdUOJIng de gu一Wanfa zh一bei硅多晶的硅烷法制备(polyerystalline silieonmanufaeture by silane proeess)以甲硅烷作.介质的硅材料超提纯技术。是硅多晶的重要生产方法之一。其实质是先用硅粉或硅的化合物制成甲硅烷(SIH小然后用精馏等方法进行提纯，将纯SIH4经热分解siH;干里止篷些生51+2H2而得硅多晶。siH、无腐蚀性，热分解温度低且分解率高，故此法所得硅多晶的纯度高，产率高;但因SIH魂易燃易爆，需采取专门措施。2。世纪50年代，一些厂家曾试图用硅烷法制造硅多晶，均因未解决好爆炸问题而被迫停产。首先实行稳定生产的是日本小松电子金属公司与石嫁研究所合作开发的以硅化镁作原料的工艺。其反应式为: NH。MgZSi+4NH;CI一SIH4个斗ZMgC12+4NH:个siH。再经低温精馏，然后经热分解得硅多晶棒。由于合成过程中有NH3存在，在以下工序的设备上装有真空夹套，较彻底地解决了燃烧与爆炸问题。此法于1960年开始生产，硅多晶的纯度优于西门子法(见硅多晶的西门子法制备)，其硼含量一般小于千亿分之一。但由于成本高等原因，其生产规模停滞在很小的水平上。美国联合碳化物(UCC)公司研究成功了新硅烷法，使成本大幅度降低，并于1985年正式投产。此法利用如下合成和歧化反应获得硅烷: 51+2H2+3SICI;一4SIHC13 65爪HC13一3SIHZC12十3SICI咋4SIHZC12一ZSIH3CI+ZSIHC13 3SIH3CI一SIHZCI:+SIH、整个过程是闭路，一方投入硅与氢，另一方获得硅烷，因此排出物少，对生态环境有利，同时材料的利用率高。硅多晶的纯度高，其硼含量同样小于千亿分之一。产品多用于制备区熔硅单晶，包括辐射探测器用硅单晶(见辐射探测器用锗单晶和辐射探刚器用硅单晶)，也用于优质直拉硅单晶(见半导体硅材料)的制备。美国埃西尔(Ethyl)公司利用磷肥生产的副产品制成硅烷，经提纯后进入流态化床进行热分解，制成平均粒径为0.7~。.75mm的颗粒状硅多晶，其硼含量小于0.3ppba，已批量生产。这种产品已用于硅的直拉法单晶生长，有可能用于正在开发的连续直拉法单晶生长。(万群)
