光学带隙,optical band gap
optical gap光学带隙
1.The parameters such as bond structures ,optical gap of amorphous Si films are measured by Raman spectroscope,Fourier transform infrared(FTIR)spectroscope and ultraviolet-visible(UV-VIS) spectroscope.结果表明通过乙烯掺杂制备的薄膜样品中存在着Si-C键,在R值变化的开始阶段薄膜的光学带隙随着R值增大而增大,在R=0。
2.The results show that the band tail states are not continuative and explain why theoptical gap of nc Si is broader than that of μ Si, p Si and c Si,while the conductivity of nc Si is lower than that of μ Si,p Si and c Si.利用计算结果解释了纳米硅和微晶硅、多晶硅及单晶硅相比有较宽的光学带隙和较小的电导的现象。
3.We also observed three absorption regions near theoptical gap of amorphous MCT.0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数(~8×104cm-1),研究了其光学带隙(约0。
3)optical bandgap光学带隙
1.Relationship between thermal stabilty andoptical bandgap of fluorinated amorphous carbon films;a-C:F薄膜的热稳定性与光学带隙的关联
4)optical energy gap光学带隙
1.The effects of nitrogen content in a fixed total sputtering gas flow on the preferential crystalline orientation,the mean crystalline grain size,the electrical resistivity,and theoptical energy gap of as-deposited films were investigated.采用反应射频磁控溅射法,在氮气和氩气的混合气体氛围中,玻璃基底上制备出了具有半导体特性的氮化铜(Cu3N)薄膜,并研究了混合气体中氮气分量对Cu3N薄膜的择优生长取向、平均晶粒尺寸、电阻率和光学带隙的影响。
5)blue-shift of optical band gap光学带隙蓝移
6)apparent optical band gap表观光学带隙
1.It is found that theapparent optical band gap decreased and the red shift of optical absorption band edge increased as the diameter of TiO2 UFP coated decreased.制备了一系列表面包覆硬脂酸的TiO_2超微粒,发现表面包覆硬脂酸的TiO_2超微粒随着超微粒粒径减小,其表观光学带隙(E_g)降低,即吸收光谱带边红移加大。
2.A series of TiO2 ultrafine particles (UFP) coated with a layer of oleic acid radicals were synthesized, and we found that theapparent optical band gap decreased and the red shift of optical absorption band edge increased when the diameter of TiO2 UFP coated decreased.结果表明,表面包覆油酸的TiO_2超微粒的表观光学带隙(E_s)随着超微粒粒径减小变小;相同粒径表面包覆油酸的TiO_2超微粒的表观光学带隙与表面包覆硬脂酸的TiO_2超微粒几乎相同,但比表面包覆十二烷基苯磺酸的TiO_2超微粒大。
延伸阅读
光学带隙（opticalbandgap）光学带隙（opticalbandgap）非晶态半导体的本征吸收边附近的吸收曲线通常分为三个区域：价带扩展态到导带扩展态的吸收为幂指数区；价带扩展态到导带尾的吸收为指数区；价带尾到导带尾的吸收为弱吸收区。非晶半导体的带隙没有明确的定义。定义其光学带隙的简单方法是E03或E04，即吸收系数为103cm-1或104cm-1时所对应的光子能量。物理意义较明确的定义方法是Tauc带隙，主要考虑幂指数区的带-带吸数，此时α(hv)∝c(hv-Eg)γ，C和γ与能带结构有关，对于抛物线形能带结构γ取2，由(αhv)1/2～hv关系曲线求得的Eg称为Tauc带隙。
