高纯半绝缘4H-SiC,high-quality semi-insulating 4H-SiC
1)high-quality semi-insulating 4H-SiC高纯半绝缘4H-SiC
1.ESR characteristics ofhigh-quality semi-insulating 4H-SiC crystal prepared by LPCVDLPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性
英文短句/例句
1.ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDLPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性
2.The Formation and Characteristics of Semi-insulating SiC with the Doping of Vanadium;钒掺杂半绝缘SiC的制备及特性研究
3.Investigation of TiC Ohmic Contacts to N-type 4H-SiC Semiconductor;TiC/n型4H-SiC半导体欧姆接触研究
4.Pure insulating pulpGB/T13505-1992高纯度绝缘木浆
5.Electrical Characterization Measurement of Semi-insulating SiC Single Crystal;半绝缘SiC单晶电学参数的测量技术研究
6.Electrical Characterization Measurement of Semi-insulating SiC Single Crystal半绝缘SiC单晶材料的电学参数测试研究
7.The Study of High Frequency Small Signal Characteristics for 4H-SiC Buried-Channel MOSFET;4H-SiC埋沟MOSFET的高频小信号特性研究
8.Study of High Frequency 4H-SiC Bipolar Junction Transistor高频4H-SiC双极晶体管的研制
9.Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology采用场板和边缘终端技术的大电流Ni/4H-SiC SBDs
10.The Fabrication of Au/4H-SiC Semitransparent Schottky UV Photodiode;Au/4H-SiC半透明肖特基UV光电二极管的研制
11.Simulation Study of 4H-SiC Metal-Semiconductor Bipolar Junction Transistors4H-SiC金属—半导体双极晶体管的模拟研究
12.A Study on Nonlinear Models for 4H-SiC MESFET;4H-SiC MESFET非线性模型研究
13.Study of Annealing of 4H-SiC SBD and JBS4H-SiC SBD和JBS退火研究
14."At absolute zero, a pure semiconductor has all of its electrons tightly bound and acts as an insulator."在绝对零度时,纯半导体所有电子都紧紧结合在一起,因而显示出绝缘体的性质。
15.metal insulater-semiconductor金属—绝缘体—半导体
16.The Theoretical and Experimental Study for 4H-SiC MESFET;4H-SiC MESFET理论模型与实验研究
17.Study on Defects of SiO_2/4H-SiC(0001) Interface by XPS;SiO_2/4H-SiC（0001）界面缺陷的XPS研究
18.The Study on 4H-SiC MOS Process and Electrical Properties;4H-SiC MOS结构工艺与电学特性研究
相关短句/例句
Semi-insulating 4H-SiC半绝缘4H-SiC
3)semi-insulating SiC半绝缘SiC
1.These will be very helpful for the design ofsemi-insulating SiC materials.这对于半绝缘SiC材料设计将非常有帮助。
4)H-SiC4H-SiC
1.Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC;4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制
2.Fabrication of 4H-SiC Buried-Channel nMOSFETs;4H-SiC埋沟MOSFET的研制(英文)
3.Second-Order Raman Scattering from n- and p-Type 4H-SiC;n型和p型4H-SiC的二级喇曼谱(英文)
5)SiC Side LiningSic绝缘侧壁
6)metal-insulator-SiC(MISiC)金属-绝缘体-SiC(MISiC)
延伸阅读
bioactive glass-ceramic composite reinforced by SiC whisker分子式：CAS号：性质：由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布，使材料中的裂纹相对均匀，裂纹扩展发生转向和分支；外力作用下碳化硅晶须拔出时产生的拔出效应，使复合陶瓷的弯曲强度达460MPa，断裂韧性达4.3MPa·m1/2，维伯尔系数高达24.7，标志着它是可承力的生物陶瓷复合材料。
