晶体热效应,Thermal effect
1)Thermal effect晶体热效应
1.In recent years, in endeavoring to obtain higher output powers from continuous-wave end-pumped solid-state lasers, one must consider thermal effects that will impact optical performance.分析了LD泵浦矩形截面激光晶体热效应的基本理论,并根据理论实际计算了周边恒温冷却的矩形截面Nd:YVO_4,Nd:GdVO_4和Nd:GdYVO_4晶体内部温度场分布。
英文短句/例句
1.Influence of the Third Thermal Boundary Condition on the Thermal Effect of Laser Crystal第三类热边界条件对激光晶体热效应的影响
2.The Characteristics of LD End-pumped Laser Crystal on Thermal Effect and Second Harmonic Generation;LD端面泵浦激光晶体热效应分析及倍频研究
3.Study on Thermal Effect of LD End-pumped Laser Crystal;激光二极管端面泵浦激光晶体热效应研究
4.Thermal Effect in Nd: LuVO_4 Crystal Slab by Laser Diode Side-Pumped激光二极管侧面抽运平板Nd:LuVO_4晶体热效应
5.Self-heating Effect of SOI LDMOS Power TransistorsSOILDMOS晶体管的自加热效应
6.Study of Thermal Squeezed Effect of Magnons in the Ferromagnet;铁磁晶体中磁振子热压缩效应的研究
7.Study on the Simulation Technique in Self-heating Effect and KNIK Effect of Thin Film Transistors;多晶硅薄膜晶体管自加热效应和KINK效应的模拟技术研究
8.Finite Element Analysis of TSOP Failure during Mould Release and Temperature Distribution in Polysilicon TFT under Self-heating Stress;TSOP失效和多晶硅薄膜晶体管自加热效应的有限元分析和模拟
9.polysilicon fet多晶硅场效应晶体管
10.double diffused mos fetdmos场效应晶体管
11.metal insulator semiconductor fetmis场效应晶体管
12.Investigation on the Thermal Effect in BBO Crystal by Low-power Pumped Frequency Doubling低功率抽运下BBO晶体倍频过程中热效应的研究
13.Thermal Effect in High-Power Yb~(3+)-Doped Photonic Crystal Fiber Lasers掺镱大功率光子晶体光纤激光器热效应分析
14.Thermal Effect of LD End-Pumped Laser Crystal Rods Based on Convective Heat-Transfer about Side Surface基于边界对流传热的LD端面抽运圆柱形晶体的热效应
15.vertical junction fet垂向结型场效应晶体管
16.source-and-drain junction源漏结-声效应晶体管的
17.n-channel transistorｎ沟道场效应晶体管
18.vertical channel fet垂直沟道场效应晶体管
相关短句/例句
crystal pyroelectric effect晶体热释电效应
3)crystal effect晶体效应
4)thermal lens of KTP crystalKTP晶体的热透镜效应
5)transistance[tr?n"sist?ns]晶体管效应
6)field effect transistor [FET]场效应晶体
延伸阅读
晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
