Sb2O3掺杂量,Sb2O3 -doped amount
1)Sb2O3 -doped amountSb2O3掺杂量
2)High d 33 ·g 33 parameterSb2O3掺杂
3)boron-doped content硼掺杂量
1.Relationship betweenboron-doped content and single polarization single mode band-width of W-tunneling optical fiber is analysed.分析了W 型单模单偏振光纤中 ,椭圆内包层硼掺杂量与单模单偏振带宽的关系 ,得出了长W 型单模单偏振光纤的带宽与内包层硼掺杂量的大小无关 ,它只由光纤几何结构以及内包层折射率深度确定 ,而对于短W 型单模单偏振光纤 ,硼掺杂量的增加可以增大截止基模能量损耗 ,从而适度提高其消光比和有效带宽。
4)Co doping amounts钴掺杂量
1.Effect ofCo doping amounts on microstructure and magnetic properties of MnZn ferrite;钴掺杂量对锰锌铁氧体显微结构和性能的影响
5)dopant amount掺杂量
1.Sb-doped SnO_2 films(antimony-doped tin oxide,ATO) were prepared by chemical vapor deposition(CVD) method to analyze the effect ofdopant amount on the structure and properties of the ATO films.采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响。
2.The remainingdopant amount is measured after reducing and sintering in this paper.测试分析了不同掺杂量的材料经过还原和烧结后获得的 Si、Al、K 残留量,并对不同 Si、Al、K 掺杂量的钼丝的再结晶行为进行了研究。
英文短句/例句
1.Analysis of Cu-doping Amount and Study on X-ray Diffraction for Cu-doped α-Fe_2O_3 Nano-powderCu掺杂α-Fe_2O_3纳米粉体的掺杂量分析与X射线衍射研究
2.Effect of Sb_2O_3-doped amount on the electrical properties of BaBiO_3 based ceramicsSb_2O_3掺杂量对BaBiO_3基陶瓷电性能的影响
3.Study on Effect of Doping Content on the Performance of ZnO Ceramic Target掺杂量对ZnO陶瓷靶材性能影响的研究
4.Preparation and Photoluminescent Characteristics of ZnS and Doped ZnS Quantum Dots;ZnS及其掺杂量子点的制备与荧光性能研究
5.Broadband Infrared Luminescence and Optical Amplification in PbS Doped Glasses;PbS掺杂量子点玻璃的超宽带红外发光和光放大
6.The influence of different Fe doping on ZnO films" luminescence performanceFe的不同掺杂量对ZnO薄膜光致发光的影响
7.Effects of MnCO_3-doped amounts on the electromagnetic properties of Z-type hexaferritesMnCO_3掺杂量对Z型六方铁氧体电磁性能的影响
8.Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectanceGB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
9.essays liberally interlarded with quotations from the poets大量掺杂诗人名句的文章.
10.A Study on Coupling Mechanism and Impurity Effect in the Quantum Paraelectrics;掺杂及磁电耦合对量子顺电体的影响
11.Energy Upconversion from Yb~(3+)-doped ZrF_4 Glass;稀土Yb~(3+)掺杂ZrF_4玻璃的能量上转换
12.Mn-Doped ZnS Quantum Dots Based Room-Temperature Phosphorescence Sensing基于Mn掺杂ZnS量子点的室温磷光传感
13.Effect of EDTA and KCl Doping on the Optical Quality of KDP CrystalEDTA和KCl掺杂对KDP晶体光学质量的影响
14.A substance that adulterates.掺杂物掺有杂质的物质
15.Measurement of impurity inclusions in sulfur-doped diamond硫掺杂金刚石中杂质含量的表征与测定
16.Study on Theoretical Calculation of Optimum Doping Content in Electric Thin Films;电子薄膜材料最佳掺杂含量的理论研究
17.Preparation and Characteristics of the Rare-Eearth Doped ZnS Quantum Dots;稀土掺杂ZnS量子点的制备与发光性能研究
18.Study on Theoretical Calculation of Optimum Doping Content in Luminescence Materials;几种半导体发光材料最佳掺杂含量的理论研究
相关短句/例句
High d 33 ·g 33 parameterSb2O3掺杂
3)boron-doped content硼掺杂量
1.Relationship betweenboron-doped content and single polarization single mode band-width of W-tunneling optical fiber is analysed.分析了W 型单模单偏振光纤中 ,椭圆内包层硼掺杂量与单模单偏振带宽的关系 ,得出了长W 型单模单偏振光纤的带宽与内包层硼掺杂量的大小无关 ,它只由光纤几何结构以及内包层折射率深度确定 ,而对于短W 型单模单偏振光纤 ,硼掺杂量的增加可以增大截止基模能量损耗 ,从而适度提高其消光比和有效带宽。
4)Co doping amounts钴掺杂量
1.Effect ofCo doping amounts on microstructure and magnetic properties of MnZn ferrite;钴掺杂量对锰锌铁氧体显微结构和性能的影响
5)dopant amount掺杂量
1.Sb-doped SnO_2 films(antimony-doped tin oxide,ATO) were prepared by chemical vapor deposition(CVD) method to analyze the effect ofdopant amount on the structure and properties of the ATO films.采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响。
2.The remainingdopant amount is measured after reducing and sintering in this paper.测试分析了不同掺杂量的材料经过还原和烧结后获得的 Si、Al、K 残留量,并对不同 Si、Al、K 掺杂量的钼丝的再结晶行为进行了研究。
6)quantity of doped TiO2TiO2掺杂量
1.The effect of thequantity of doped TiO2 on the recovery time of the PTCR starter was investigated by adjusting thequantity of doped TiO2.为了研究TiO2添加量对PTCR启动器恢复特性的影响,采用改变TiO2掺杂量的方法,对不同TiO2掺杂量的PTCR启动器恢复特性进行了研究。
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式：C16H16ClN3O3S分子量：365.5CAS号：26807-65-8性质：暂无制备方法：暂无用途：用于轻、中度原发性高血压。
