SiC质,Silicon carbide refractories
1)Silicon carbide refractoriesSiC质
英文短句/例句
1.Slag resistance of SiC refractories for power station boiler电站锅炉用SiC质耐火材料抗渣性的研究
2.Effect of Nano SiC Addition on Properties of Al_2O_3-SiC-C Castables纳米SiC对Al_2O_3-SiC-C质浇注料性能的影响
3.A Study on the Effct of Interface Properties of SiO_2/SiC on Performances of N-Channel SiC Mosfet;SiO_2/SiC界面质量对n沟SiC MOSFET器件性能影响的研究
4.Characterization of 4H-SiC Homoepitaxial layers4H-SiC同质外延层的质量表征
5.Design of SiCGe/SiC Light-Activated Darlington Transistors and Growth of SiCGe/SiC Heterojunction;SiCGe/SiC异质结光控达林顿晶体管设计及SiCGe/SiC异质结的制备
6.Study on Casting Material for Blast Furnace"s Trough Made of Al_2O_3-SiC-C;Al_2O_3-SiC-C质高炉出铁沟浇注料的研究
7.The Preparation and Photo-electron Emission Character of SiC Thin Film;SiC薄膜的制备以及光电发射性质
8.Preparation and Photoluminescence of SiC Nanocrystal Films;SiC纳米晶薄膜的制备及发光性质
9.A Study of 6H-SiC Heterojunction Source/Drain MOSFET;6H-SiC异质结源漏MOSFET的研究
10.Studies of Impurities in a Wide Band Semiconductor SiC宽禁带SiC材料中杂质的分析研究
11.Studies of Vanadium in SiC by SIMSSiC中V含量的二次离子质谱分析研究
12.The Buffer Layer of Al-doped 4H-SiCAl掺杂4H-SiC同质外延的缓冲层
13.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts氢氟酸刻蚀对Ni/6H-SiC接触性质的作用
14.Study on Preparation and Properties of SiC/Si Heterostructures and Hafnium Oxide High-κ Thin Films;SiC/Si异质结构和HfO_2高κ薄膜制备及其性能研究
15.Effect of Different Binder System on Properties of Al_2O_3-SiC-C Based Ramming Material;不同结合体系对Al_2O_3-SiC-C质捣打料性能的影响
16.Research on Composition, Structure and Properties of Al_2O_3-Spinel-SiC-C Based Refractory;Al_2O_3-MgAl_2O_4-SiC-C质耐火材料组成、结构及性能研究
17.Studies of Induced Defects and Its Optical Properties in Ion-implanted 6H-SiC;离子注入6H-SiC引起的损伤及其光学性质的研究
18.Numerical Simulation and Analysis of Characteristics for SiCGe/SiC Hetero-junction Photodiode;SiCGe/SiC异质结光电二极管的数值模拟与特性分析
相关短句/例句
SiC saggerSiC质匣钵
pared with Germany"sSiC sagger,the microstructures of theSiC sagger produced by akiln furniture factory were analyzed with scanning electron microscope in the paper.利用扫描电子显微镜对某窑具厂制造的SiC质匣钵进行了显微结构分析 ,并通过与德国的SiC质匣钵比较 ,得出了匣钵开裂的原因是SiC颗粒被氧化变小 ,针状莫来石长大、粗化 ,玻璃相增多。
3)Alumina-silicon carbide basedAl2O3-SiC质
4)Al2O3-SiC-CAl2O3-SiC-C质
5)SiCGe/SiC hetero-junctionSiCGe/SiC异质结
1.For the purpose of developing a light-triggering SiC power switch, characteristics of theSiCGe/SiC hetero-junction photodiode are simulated and analyzed using MEDICI.为配合光控SiC功率开关器件的开发,利用MEDICI模拟和分析了SiCGe/SiC异质结光电二极管的光电特性。
6)silicon carbideSiC
1.Status of Studies on the Oxidation of Silicon Carbide;SiC材料氧化行为研究进展
2.Large-scalesilicon carbide nanowires were prepared by using pure silicon powder and phenolic resin,which were mixed,molded,carbonizated,and then subjected to the microwave heating with a rate of 10℃/min between 1300℃and 1400℃in the static argon atmosphere for 0.5～2h的微波加热条件下制备了SiC纳米线。
3.The properties and microwave absorbing performance for high temperature ofsilicon carbide are reviewed,and the improvements on its electrical properties by doping are discussed.综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。
延伸阅读
Sic1、名称解释碳化硅又称金钢砂或耐火砂。碳化硅是用石英砂、石油焦(或煤焦)、木屑(生产绿色碳化硅时需要加食盐)等原料在电阻炉内经高温冶炼而成。目前我国工业生产的碳化硅分为黑色碳化硅和绿色碳化硅两种，均为六方晶体，比重为3.20～3.25，显微硬度为2840～3320kg/mm2。包括黑碳化硅和绿碳化硅，其中：黑碳化硅是以石英砂,石油焦和优质硅石为主要原料,通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉,性脆而锋利。绿碳化硅是以石油焦和优质硅石为主要原料,添加食盐作为添加剂，通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉。2.性质碳化硅的硬度很大，具有优良的导热和导电性能，高温时能抗氧化。3.用途(1)作为磨料，可用来做磨具，如砂轮、油石、磨头、砂瓦类等。(2)作为冶金脱氧剂和耐高温材料。碳化硅主要有四大应用领域,即: 功能陶瓷、高级耐火材料、磨料及冶金原料。目前碳化硅粗料已能大量供应, 不能算高新技术产品,而技术含量极高 的纳米级碳化硅粉体的应用短时间不可能形成规模经济。(3)高纯度的单晶，可用于制造半导体、制造碳化硅纤维。4.产地、输往国别及品质规格(1)产地：青海、宁夏、河南、四川、贵州等地。(2)输往国别：美国、日本、韩国、及某些欧洲国家。(3)品质规格：①磨料级碳化硅技术条件按gb/t2480—96。各牌号的化学成分由表6-6-47和表6-6-48给出。②磨料粒度及其组成按gb/t2477—83。磨料粒度组成测定方法按gb/t2481—83。
