介电调谐性能,dielectric tunable properties
1)dielectric tunable properties介电调谐性能
1.Thedielectric tunable properties of(Ba_(0.6)Sr_(0.4))TiO_3 grade thin films with rich titanium;富钛梯度(Ba_(0.6)Sr_(0.4))TiO_3薄膜的介电调谐性能研究
2.Fabrication of BST thin films by sol-gel method anddielectric tunable properties;sol-gel法制备BST薄膜及介电调谐性能
3.The influence of the Mg content on grain sizes anddielectric tunable properties of Mg doped BSKT thin films was investigated and the reasons of evolvement of dielectric loss pattern under DC electric field were discussed.X射线衍射(XRD)和扫描电镜(SEM)分析测定了物相微结构和薄膜表面形貌,研究了Mg掺杂含量对BSKT晶粒尺寸和直流场介电调谐性能的影响,讨论了直流场介电损耗谱演变的原因。
英文短句/例句
1.Preparation and Dielectric Tunability of K Doped PST Ferroelectric FilmK掺杂PST薄膜的制备与介电调谐性能
2.Preparation and Dielectric Tunability of K Doped PST Ferroelectric Thin Film掺杂PST薄膜的制备与介电调谐性能研究
3.Measuring methods of electrical properties of voltage-tunable magnetronsGB/T9584-1988电压调谐磁控管电性能测试方法
4.electronic-tuning non-linearity-factor电子调谐非线性系数
5.Synthesis, Structure and Dielectric Tunability Properties of Bi-doped PST Thin Film;Bi掺杂PST薄膜的制备及介电可调性能研究
6.The preparation and properties of the dielectric/semiconductor functional integrated thin films介电/半导体功能集成薄膜的制备和特性调控
7.Non-linear Dielectric Characteristic and Ferroelectrics Phase Transition of (Ba_(1-x)Ca_x)(Ti_(1-y)Sn_y)O_3 Ceramics;非线性可调锡钛酸钡钙陶瓷的介电性能和铁电相变
8.Preparation and Properties of Sol-Gel Derived PST Thin Film with High Dielectric Tunability;Sol-Gel法高介电调谐PST薄膜的制备与研究
9.Test method for dielectric properties of dielectric crystalGB/T16822-1997介电晶体介电性能的试验方法
10.Physical and Electrical Properties of ZrO_2 Gate Dielectrics Film高介电栅介质ZrO_2薄膜的物理电学性能
11.High fidelity sound output of television tuners minimum performance requirementsGB/T17310-1998电视调谐接收器高保真声输出最低性能要求
12.dielectric properties test of insulating material绝缘材料介电性能测试
13.In this article, the schematic diagram, main specifications and the realization of the circuits of the phase differential modulator and measurer are described.介绍了相位差调制器及测量器的原理框图、要性能指标及电路实现。
14.Solid Solution Modification on the Microwave Dielectric Properties of Tungsten Bronze Ceramics with Perovskite Additives;钙钛矿添加剂对钨青铜型陶瓷微波介电性能的固溶调控
15.Research on the Dielectric Properties of BaTiO_3 Ceramics;BaTiO_3基介质陶瓷介电性能研究
16.The Dielectric Properties of CaCu_3Ti_4O_(12) with Low-loss Dielectrics Doping;低损耗介质掺杂的CaCu_3Ti_4O_(12)介电性能研究
17.Dielectric Properties of Bi_2O_3-ZnO-Nb_2O_5 System Ceramicβ-BZN介质陶瓷材料介电性能研究
18.Effect of BiVO_4 Doping on Dielectric Properties of CLST Microwave Dielectric CeramicsBiVO_4掺杂对CLST介质陶瓷介电性能的影响
相关短句/例句
dielectric tunability介电调谐特性
3)dielectric tunability介电调谐
1.Preparation and Dielectric Tunability of K Doped PST Ferroelectric Thin Film掺杂PST薄膜的制备与介电调谐性能研究
2.5 mol %,5 mol %) uniform film of K doping on PtTi/SiO2/Si substrates were prepared by a Sol-Gel process;and theirdielectric tunability were investigated.5 mol%,5 mol%)多层均匀薄膜,并研究了它们的介电调谐性能。
4)high dielectric tunability高介电调谐
5)tunability调谐性能
1.Tunability of Nonuniform Reflection Holographic Filter;反射全息滤光片调谐性能的研究
2.Thetunability of a nonuniform reflection holographic filter was investigated theoretically and experimentally.结果表明 ,反射全息滤光片不仅具有高光密度 (大于 4D)和窄带宽 ,还具有很好的调谐性能 。
6)tuner performance调谐器性能
延伸阅读
高聚物介电性能在外加电场中只有束缚电荷作有限位移的材料称电介质,一般来说,高聚物都是电介质。电介质的性能可用介电常数和介电损耗正切 tgδ两个参数来表征。介电常数 ε是电容器中充满该材料时的电容量与在真空时的电容量之比,真空的ε等于1,空气的ε接近1,大多数非极性高聚物的ε为2左右,极性高聚物的ε为2~10。介电常数表征电解质极化的宏观参数,它与分子极化率α之间的关系由克劳修斯-莫索提公式给出: 式中Μ为分子量;d为密度;NA为阿伏伽德罗数。分子极化率包括电子极化率αe和原子极化率αa,并与极性电介质在直流电场时的静介电常数ε0和分子的有效偶极矩μe有关。(1)式(1)称德拜公式,式中k为玻耳兹曼常数;T为热力学温度。只有电子极化和原子极化的非极性高聚物可通过麦克斯韦关系用折射率n表示:ε=n2,式中ε和n应在同一频率下测量。极性高聚物由于偶极极化,ε的实测值偏离n2较大。介电损耗正切也称介电损耗因子,tgδ是电介质在交变电场中损耗能量与贮存能量之比。由于电介质、基团或偶极的取向运动存在着阻力,使得极化滞后于电场的变化,其滞后相角δ的正切tgδ正比于材料在交变电场中能量的损耗。高聚物是具有低介电常数和低介电损耗的优良绝缘材料,非极性高聚物的tgδ可小于1×10-4,极性高聚物的tgδ为5×10-3~1×10-1。电介质在交变电场中能量的损耗与交变电场的频率f以及tgδ成正比,因此tgδ高的聚合物由于能将较多的电能转变为热能,所以它适合于高频焊接或高频加热,但不适合作高频绝缘材料。复数介电常数在交变电场中的介电性能要用复数介电常数ε*来描述: ε*=ε′-iε″式中ε′为实数部分,ε″为虚数部分,因此。介电性能与温度高聚物的介电性能有显著的频率和温度依赖性。具有单一松弛时间的电介质(实际上高聚物松弛时间分布很宽,是个谱)的介电性能的频率依赖性由德拜色散方程给出: (2)(3)(4)式(2)、(3)、(4)中ε∞和εS分别为色散区两侧高频和低频区的介电常数,称为未松弛和已松弛介电常数;ω 为角频率;τ为松弛时间。高聚物介电性能与温度的关系是通过松弛时间 τ与温度的依赖性相联系的,即: 式中τ0为常数;E为活化能;R为气体常数;T为绝对温度。介电色散由式(3)、(4)可知,ε′和ε″为lgωτ的函数,当ωτ=1时,ε′发生骤变而ε″出现峰值,这种现象称为介电色散。高分子介电色散是基团和链段松弛过程的表现,因此,高聚物的介电性能温度谱或频率谱是研究高聚物转变和松弛以及分子运动的重要方法之一。