带隙基准,Bandgap reference
1)Bandgap reference带隙基准
1.CMOS bandgap reference voltage source with high PSRR;一种高电源抑制比的CMOS带隙基准电压源
2.Design of a low-voltage CMOS bandgap reference circuit based on the body-driven technique;基于体驱动技术的低压CMOS带隙基准电路设计
3.A resistorless CMOS bandgap reference with below 1 V output;输出电压低于1 V的无电阻CMOS带隙基准电压源(英文)
英文短句/例句
1.A High-Precision Bandgap Reference with 2~(nd)-Order Compensation一种带2阶补偿的高精度带隙基准源
2.A Veference Voltage Circuit Design on BiCMOS Technology基于BiCMOS工艺的带隙基准电压源设计
3.Several Novel Low Voltage Low Power CMOS Bandgap Reference Voltage Source低压低功耗CMOS带隙基准电压源设计
4.A high-performance CMOS Bandgap Voltage Reference Design一种高性能CMOS带隙基准电压源设计
5.Simulation and Design of an Improved BiCMOS Band-Gap Reference一种改进型BiCMOS带隙基准源的仿真设计
6.Structure-Improved Low Voltage Low Power CMOS Bandgap Reference改进结构的低压低功耗CMOS带隙基准源
7.Design of Novel Current Trimming CMOS Bandgap Reference新型电流微调CMOS带隙基准源的设计
8.High Performance CMOS Bandgap Voltage Reference Source with Multiple V/I Output多路V/I输出的高性能CMOS带隙基准源
9.A Bandgap Reference Designed for WSN RF Front-end应用于WSN射频前端带隙基准设计
10.A BiCMOS Bandgap Reference for LDOs一种用于LDO的BiCMOS带隙基准
11.Super Performance BiCMOS Band-Gap Voltage Reference一种高性能的BiCMOS带隙基准电压源
12.Design of a High Precision CMOS Bandgap Reference Circuit一种高精度CMOS带隙基准电路的设计
13.Realization and Design of a Band-Gap Reference Voltage Based on Low Dropout Voltage Regulator;一种基于LDO带隙基准电压源的设计与实现
14.Design of a Bandgap Reference for LDOs一种基于LDO稳压器的带隙基准电压源设计
15.Reference Voltage Based on Bandgap Reference for Accelerometers用于加速度计基于带隙基准电压源的设计(英文)
16.Design of Bandgap Reference Using Chopper Technology基于斩波调制的带隙基准电压源的设计
17.Therefore, we get the bandgap reference voltage with very small temperature coefficient.由此得到温度系数很小的带隙基准电压。
18.Low Voltage High Precision 2～(nd) Order Temperature Compensation Bandgap Voltage Reference;低压二次温度补偿高精度带隙基准源设计
相关短句/例句
band-gap reference带隙基准
1.Based on the analysis of conventionalband-gap reference circuitry,the circuit fo- cuses on improving performance of operational amplifier.为了满足IC设计中对基准电源低功耗、低温度系数、高电源抑制比的要求,设计一种带隙基准电压源电路。
2.After analysis of the traditional bandgap voltage reference(BGR) circuit,making use of vertical NPN bipolar transistor parasitic model,in this paper we present a novel structure implementation of theband-gap reference which have good temperature coefficient(TC) and high power supply rejection ratio(PSRR),can be used for DAC,ADC,linear regulator and so on.在分析传统带隙基准电压电路的基础上,本设计利用纵向NPN双极型晶体管的寄生模型提出了一种结构简单新颖、具有良好的温度系数和较高的电源抑制比,可用于数模转换器、模数转换器、线性稳压器和开关稳压器等电路的高精度基准电压源,此外还讨论了基准源的启动问题。
3.For low voltage and high precision applications,a standard CMOS low voltageband-gap reference circuit is introduced in this paper.设计了一种标准CMOS工艺下的低电压带隙基准电路,该电路使用了温度的二阶曲率补偿技术,使输出电压达到了较低的温度系数。
3)bandgap["b?ndɡ?p]带隙基准
1.Abandgap voltage reference based on the conventional architecture is optimized.在原有经典三条支路结构的带隙基准电路基础上,通过减少带隙电压源的电流源镜像次数及控制电流源漏源电压,在减小器件失配影响的同时,进一步减小了沟道长度调制效应的影响,大幅度提高了基准电压源的精度,降低了温度系数。
2.5um models, the paper analyzes and designs a novel LDO linear regulator, and it includes the second curvature compensationbandgap voltage reference, error amplifier, over thermal protect, limit current protect.5um器件模型,分析和设计了一款新颖的LDO线性稳压器,包括二阶曲率补偿带隙基准电压源、误差放大器、过热保护和限流电路。
3.A sub-1v low voltagebandgap reference using body-driven technique was designed in this paper.本文设计了一种电源电压低于1v的体输入式带隙基准电路。
4)bandgap voltage reference带隙基准
1.This paper introduce a high precisionbandgap voltage reference with a piecewise-linear-compensating circuit which is an easily extended structure.将该电路应用于一款Boost升压芯片的带隙基准源中,在-40~120℃的温度区间分三个子区间进行线性补偿,采用JAZZBCD05 2P3M BiCMOS工艺实现,仿真结果表明,在整个温度范围,温漂可达到5。
2.This paper proposes a novel high precision CMOSbandgap voltage reference which with a soft-start up circuit.提出了一种新颖的带有软启动的高精密CMOS带隙基准电压源。
3.Abandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.提出了一种采用分段线性补偿的方法来实现高精度带隙基准 ,其基本原理是将整个温度区间分为若干个子区间 ,在不同子区间上采用不同线性补偿函数达到最佳补偿 。
5)bandgap reference带隙基准源
1.A Curvature-Corrected CMOS Bandgap Reference;一种低压低温漂的CMOS带隙基准源
2.A design of ultra-low-powerbandgap reference base on the subthreshold region一种工作在亚阈区超低功耗带隙基准源的设计
3.The second-order nonlinear effect of the transistor VBE current varying with temperature in the conventional CMOSbandgap reference was analyzed.分析了传统CMOS带隙基准源电路中三极管VBE电流随温度变化的二阶非线性效应,提出了一种对PTAT二阶温度进行补偿的方法,并在此基础上设计了一个高精度的带隙基准源电路。
6)bandgap voltage reference带隙基准源
1.A new structure ofbandgap voltage reference with ratio-capacitance is proposed,which effectively improves the precision,reduces the power consumption of the circuit and compensates the offset voltage.设计了一种全新的电容比例型带隙基准源,用电容比例取代了通常的电阻比例,有效地减小了电路设计误差以及电路的功耗,理论失调电压可获补偿。
2.As a result of cooperation of a high-performancebandgap voltage reference and a sensitive regulator,the difference among those channels can be less than 3%,the ratio of output current versus external resistor is constant no matter how the value of resistor changes.文章介绍了一种电流精确度很高的十六通道恒流LED驱动芯片,该芯片能够提供3-50mA的单通道电流能力,并且采用高性能带隙基准源和灵敏度极高的regulator,实现了恒流通道之间的电流差异低于3%,并且在外接电阻变化时输出电流与阻值的比例恒为定值。
延伸阅读
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